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Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
23T8525
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Newark | Mosfet Transistor, P Channel, -2.2 A, -200 V, 145 Mohm, -10 V, -4 V Rohs Compliant: Yes |Vishay SI7431DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9322 |
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$2.9000 / $4.2300 | Buy Now |
DISTI #
74R0233
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Newark | P Ch Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:2.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7431DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.9000 / $2.3100 | Buy Now |
DISTI #
SI7431DP-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7431DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 138000 |
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$1.6243 / $1.7420 | Buy Now |
DISTI #
781-SI7431DP-T1-GE3
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Mouser Electronics | MOSFET -200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 45879 |
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$1.8300 / $3.6600 | Buy Now |
DISTI #
E02:0323_00530524
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Arrow Electronics | SI7431DP-T1-GE3 Vishay MOSFETs Transistor P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Arrow.com Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2403 | Europe - 3000 |
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$1.7913 / $1.8263 | Buy Now |
DISTI #
V72:2272_09216352
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Arrow Electronics | SI7431DP-T1-GE3 Vishay MOSFETs Transistor P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Arrow.com Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2329 Container: Cut Strips | Americas - 2955 |
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$1.8850 / $2.9120 | Buy Now |
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Future Electronics | P-CH POWERPAK SO-8 200V 174MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$1.8200 | Buy Now |
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Future Electronics | P-CH POWERPAK SO-8 200V 174MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$1.8300 | Buy Now |
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Future Electronics | P-CH POWERPAK SO-8 200V 174MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$1.8200 / $2.1800 | Buy Now |
DISTI #
77378568
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Verical | SI7431DP-T1-GE3 Vishay MOSFETs Transistor P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Arrow.com Min Qty: 3000 Package Multiple: 3000 Date Code: 2403 | Americas - 3000 |
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$1.7826 / $1.8175 | Buy Now |
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SI7431DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7431DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 2.2 A | |
Drain-source On Resistance-Max | 0.174 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5.4 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI7431DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7431DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFE9230-JQR-BE4 | Power Field-Effect Transistor, 3.6A I(D), 200V, 0.825ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | SI7431DP-T1-GE3 vs IRFE9230-JQR-BE4 |
IRFE9230 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Infineon Technologies AG | SI7431DP-T1-GE3 vs IRFE9230 |
IRFE9230PBF | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Infineon Technologies AG | SI7431DP-T1-GE3 vs IRFE9230PBF |
IRFE9230E4 | Power Field-Effect Transistor, 3.6A I(D), 200V, 0.825ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | SI7431DP-T1-GE3 vs IRFE9230E4 |
IRFE9230-JQR-B | Power Field-Effect Transistor, 3.6A I(D), 200V, 0.825ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | SI7431DP-T1-GE3 vs IRFE9230-JQR-B |
JANTX2N6851U | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Infineon Technologies AG | SI7431DP-T1-GE3 vs JANTX2N6851U |
IRFE9230E4 | 3.6A, 200V, 0.825ohm, P-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | SI7431DP-T1-GE3 vs IRFE9230E4 |
IRFE9230-JQR-BE4 | 3.6A, 200V, 0.825ohm, P-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | SI7431DP-T1-GE3 vs IRFE9230-JQR-BE4 |
JANTXV2N6851U | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Infineon Technologies AG | SI7431DP-T1-GE3 vs JANTXV2N6851U |
SI7431DP-T1-E3 | Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7431DP-T1-GE3 vs SI7431DP-T1-E3 |