Transistors
SI7450DP-T1
Description: Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8

Overview of SI7450DP-T1 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
FIDO5100BBCZ Analog Devices REM Switch
FIDO5200CBCZ Analog Devices REM Switch with EtherCAT
ADIN1300CCPZ Analog Devices Industrial Ethernet Gigabit PH

Price & Stock for SI7450DP-T1 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   586
RFQ

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Part Data Attributes for SI7450DP-T1 by Vishay Siliconix

SI7450DP-T1
Vishay Siliconix
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
SOT
Package Description
POWERPAK, SO-8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3.2 A
Drain-source On Resistance-Max
0.09 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-C8
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
C BEND
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI7450DP-T1
    Vishay Siliconix
    Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
    VS

Alternate Parts for SI7450DP-T1

This table gives cross-reference parts and alternative options found for SI7450DP-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7450DP-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI7450DP-T1-GE3 Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI7450DP-T1 vs SI7450DP-T1-GE3
SI7450DP-T1-GE3 Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO T/R Vishay Siliconix SI7450DP-T1 vs SI7450DP-T1-GE3
SI7450DP-T1-E3 Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI7450DP-T1 vs SI7450DP-T1-E3
SI7450DP-T1-E3 Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO T/R Vishay Siliconix SI7450DP-T1 vs SI7450DP-T1-E3
Part Number Description Manufacturer Compare
FQD18N20V2TM 15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 Rochester Electronics LLC SI7450DP-T1 vs FQD18N20V2TM
IRFR13N20D Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier SI7450DP-T1 vs IRFR13N20D
FDD2670 N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ, 2500-REEL onsemi SI7450DP-T1 vs FDD2670
PSMN130-200D/T3 Power Field-Effect Transistor Nexperia SI7450DP-T1 vs PSMN130-200D/T3
FQD18N20V2TF Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation SI7450DP-T1 vs FQD18N20V2TF
FQD12N20LTF 9A, 200V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC SI7450DP-T1 vs FQD12N20LTF
EPC2012CENGR Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.70 X 0.90 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 Efficient Power Conversion SI7450DP-T1 vs EPC2012CENGR
PSMN130-200D,118 N-channel TrenchMOS SiliconMAX standard level FET@en-us DPAK 3-Pin Nexperia SI7450DP-T1 vs PSMN130-200D,118
STD20NF20 N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package STMicroelectronics SI7450DP-T1 vs STD20NF20
HUF75925D3ST 11A, 200V, 0.275ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC SI7450DP-T1 vs HUF75925D3ST

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