Part Details for SI7456DP-T1-E3 by Vishay Intertechnologies
Overview of SI7456DP-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SI7456DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06J8153
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Newark | N Channel Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:5.2W Rohs Compliant: Yes |Vishay SI7456DP-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.7700 | Buy Now |
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DISTI #
35K3490
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Newark | N Channel Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Vishay SI7456DP-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1700 / $1.4000 | Buy Now |
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DISTI #
SI7456DP-T1-E3
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Avnet Americas | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$1.0706 / $1.1375 | Buy Now |
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Bristol Electronics | 42 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 182 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Not Compliant | 44 |
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RFQ | |
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CHIPMALL.COM LIMITED | 100V 5.7A 25m@10V,9.3A 1.9W 4V@250uA 1 N-Channel PowerPAK-SO-8 MOSFETs ROHS | 1651 |
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$0.7087 / $0.9770 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 38 |
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$6.0000 / $9.2300 | Buy Now |
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DISTI #
SI7456DP-T1-E3
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EBV Elektronik | Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R (Alt: SI7456DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 100V 9.3A 0.02510V9.3A 5.2W 2V250uA 1 N-channel PowerPAK-SO-8 MOSFETs ROHS | 1650 |
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$0.7382 / $1.0177 | Buy Now |
Part Details for SI7456DP-T1-E3
SI7456DP-T1-E3 CAD Models
SI7456DP-T1-E3 Part Data Attributes
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SI7456DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7456DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | POWERPAK SO-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.9 W | |
| Power Dissipation-Max (Abs) | 1.9 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for SI7456DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7456DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7456DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7456DP-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SO-8, FET General Purpose Power | SI7456DP-T1-E3 vs SI7456DP-T1-GE3 |
| SI7456DP-T1 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | SI7456DP-T1-E3 vs SI7456DP-T1 |
| SI7456DP-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SO-8, FET General Purpose Power | SI7456DP-T1-E3 vs SI7456DP-T1-E3 |
| SI7456DP-T1-GE3 | Vishay Intertechnologies | $0.7090 | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 | SI7456DP-T1-E3 vs SI7456DP-T1-GE3 |
| FDB8443_F085 | onsemi | Check for Price | 40V, 80A, 2.3mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL | SI7456DP-T1-E3 vs FDB8443_F085 |
| FDB8443 | onsemi | Check for Price | N-Channel PowerTrench® MOSFET 40V, 182A, 3mΩ, D2PAK-3 / TO-263-2, 800-REEL | SI7456DP-T1-E3 vs FDB8443 |