Datasheets
SI7489DP-T1-E3 by:

Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R

Part Details for SI7489DP-T1-E3 by Vishay Siliconix

Results Overview of SI7489DP-T1-E3 by Vishay Siliconix

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SI7489DP-T1-E3 Information

SI7489DP-T1-E3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7489DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 70026278
RS SI7489DP-T1-E3 P-channel MOSFET Transistor, 28 A, 100 V, 8-Pin SOIC | Siliconix / Vishay SI7489DP-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $2.5600
$2.5600 RFQ
Bristol Electronics   2653
RFQ
New Advantage Corporation Single P-Channel 100 V 0.041 Ohms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 30000
  • 3,000 $1.4700
  • 30,000 $1.3700
$1.3700 / $1.4700 Buy Now

Part Details for SI7489DP-T1-E3

SI7489DP-T1-E3 CAD Models

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SI7489DP-T1-E3 Part Data Attributes

SI7489DP-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7489DP-T1-E3 Vishay Siliconix Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 315 ns
Turn-on Time-Max (ton) 55 ns

Alternate Parts for SI7489DP-T1-E3

This table gives cross-reference parts and alternative options found for SI7489DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7489DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7489DP-T1-GE3 Vishay Siliconix Check for Price Trans MOSFET P-CH 100V 7.8A 8-Pin PowerPAK SO T/R SI7489DP-T1-E3 vs SI7489DP-T1-GE3
SI7489DP-T1-GE3 Vishay Intertechnologies $1.3768 Power Field-Effect Transistor, 28A I(D), 100V, 0.041ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 SI7489DP-T1-E3 vs SI7489DP-T1-GE3
Part Number Manufacturer Composite Price Description Compare
SI7489DP-T1-E3 Vishay Intertechnologies $1.5382 Power Field-Effect Transistor, 28A I(D), 100V, 0.041ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK SO-8 SI7489DP-T1-E3 vs SI7489DP-T1-E3

SI7489DP-T1-E3 Related Parts

SI7489DP-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7489DP-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to minimize noise and ripple.

  • The SI7489DP-T1-E3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.

  • To ensure reliable operation, it's essential to provide adequate thermal management for the SI7489DP-T1-E3. A minimum copper area of 10mm x 10mm is recommended for heat dissipation. Additionally, consider using thermal vias and a thermal pad on the PCB to improve heat transfer.

  • Yes, the SI7489DP-T1-E3 is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to consult the datasheet and application notes for specific guidelines on using the device in automotive systems.

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