Datasheets
SI7540DP-T1-E3 by:

Power Field-Effect Transistor, 7.6A I(D), 12V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Part Details for SI7540DP-T1-E3 by Vishay Intertechnologies

Overview of SI7540DP-T1-E3 by Vishay Intertechnologies

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Applications Consumer Electronics Education and Research Environmental Monitoring Industrial Automation Audio and Video Systems Agriculture Technology Medical Imaging Entertainment and Gaming

Price & Stock for SI7540DP-T1-E3

Part # Distributor Description Stock Price Buy
Velocity Electronics Our Stock 24
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Part Details for SI7540DP-T1-E3

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SI7540DP-T1-E3 Part Data Attributes

SI7540DP-T1-E3 Vishay Intertechnologies
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SI7540DP-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 7.6A I(D), 12V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 7.6 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 3.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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