Datasheets
SI7738DP-T1-E3 by:

MOSFET N-CH D-S 150V PPAK 8SOIC

Part Details for SI7738DP-T1-E3 by Vishay Siliconix

Overview of SI7738DP-T1-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Price & Stock for SI7738DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7738DP-T1-E3CT-ND
DigiKey MOSFET N-CH 150V 30A PPAK SO-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5999
In Stock
  • 1 $4.1400
  • 10 $2.7230
  • 100 $1.9183
  • 500 $1.6471
  • 1,000 $1.4632
  • 3,000 $1.4250
$1.4250 / $4.1400 Buy Now

Part Details for SI7738DP-T1-E3

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SI7738DP-T1-E3 Part Data Attributes

SI7738DP-T1-E3 Vishay Siliconix
Buy Now Datasheet
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SI7738DP-T1-E3 Vishay Siliconix MOSFET N-CH D-S 150V PPAK 8SOIC
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7738DP-T1-E3

This table gives cross-reference parts and alternative options found for SI7738DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7738DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7738DP-T1-E3 Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SI7738DP-T1-E3
SI7738DP-T1-GE3 Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R Vishay Siliconix SI7738DP-T1-E3 vs SI7738DP-T1-GE3
Part Number Description Manufacturer Compare
BSC059N04LSG Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SI7738DP-T1-E3 vs BSC059N04LSG
SIR804DP-T1-GE3 Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SIR804DP-T1-GE3
SIR166DP-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SIR166DP-T1-GE3
BSC093N04LSG Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 Infineon Technologies AG SI7738DP-T1-E3 vs BSC093N04LSG
SI7738DP-T1-E3 Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SI7738DP-T1-E3
SIR426DP-T1-GE3 Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SIR426DP-T1-GE3
BSC016N04LSG Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SI7738DP-T1-E3 vs BSC016N04LSG
BSC360N15NS3GATMA1 Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SI7738DP-T1-E3 vs BSC360N15NS3GATMA1
SIR862DP-T1-GE3 Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SI7738DP-T1-E3 vs SIR862DP-T1-GE3
BSC059N04LSGATMA1 Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SI7738DP-T1-E3 vs BSC059N04LSGATMA1

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