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Transistors / Power Field-Effect Transistors / SI7818DN-T1-GE3
Datasheets
SI7818DN-T1-GE3 by:

Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7818DN-T1-GE3 by Vishay Intertechnologies

Overview of SI7818DN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI7818DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 38AH2392
Newark N-Channel 150-V (D-S) Mosfet Rohs Compliant: No |Vishay SI7818DN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.8260
  • 4,000 $0.7540
  • 6,000 $0.7300
  • 10,000 $0.7160
$0.7160 / $0.8260 Buy Now
DISTI # 33P5430
Newark N Ch Mosfet, 150V, 3.4A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:3.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:6V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7818DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.7540
  • 4,000 $0.6770
  • 6,000 $0.6530
  • 10,000 $0.6390
$0.6390 / $0.7540 Buy Now
DISTI # 26R1936
Newark N Channel Mosfet, 150V, 3.4A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:3.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:6V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7818DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $0.9890
$0.9890 Buy Now
DISTI # SI7818DN-T1-GE3
Avnet Americas Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7818DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.5892
$0.5892 Buy Now
Bristol Electronics   251
RFQ
DISTI # SI7818DN-T1-GE3
TTI MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 21000
In Stock
  • 3,000 $0.5610
$0.5610 Buy Now
DISTI # SI7818DN-T1-GE3
Avnet Asia Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R (Alt: SI7818DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days 0
RFQ
DISTI # SI7818DN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R (Alt: SI7818DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7818DN-T1-GE3

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SI7818DN-T1-GE3 Part Data Attributes

Parametric Data
SI7818DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7818DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 4 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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