Part Details for SI7844DP-T1-E3 by Vishay Intertechnologies
Overview of SI7844DP-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7844DP-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7844DP-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 6.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7844DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 722 |
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RFQ | ||
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Quest Components | 6.4 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 577 |
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$0.9570 / $2.3200 | Buy Now |
DISTI #
SI7844DP-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 6.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7844DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ |
Part Details for SI7844DP-T1-E3
SI7844DP-T1-E3 CAD Models
SI7844DP-T1-E3 Part Data Attributes:
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SI7844DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7844DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.4 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI7844DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7844DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7844DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD2572-F085 | N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified | onsemi | SI7844DP-T1-E3 vs FDD2572-F085 |
FDD2572 | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | SI7844DP-T1-E3 vs FDD2572 |
FDD2572 | 4A, 150V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | SI7844DP-T1-E3 vs FDD2572 |