Datasheets
SI7844DP-T1-E3 by:

Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7844DP-T1-E3 by Vishay Intertechnologies

Overview of SI7844DP-T1-E3 by Vishay Intertechnologies

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for SI7844DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7844DP-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 6.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7844DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
Bristol Electronics   722
RFQ
Quest Components 6.4 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 577
  • 1 $2.3200
  • 260 $1.0730
  • 560 $0.9570
$0.9570 / $2.3200 Buy Now
DISTI # SI7844DP-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 6.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7844DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ

Part Details for SI7844DP-T1-E3

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SI7844DP-T1-E3 Part Data Attributes:

SI7844DP-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7844DP-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.4 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.5 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7844DP-T1-E3

This table gives cross-reference parts and alternative options found for SI7844DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7844DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD2572-F085 N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified onsemi SI7844DP-T1-E3 vs FDD2572-F085
FDD2572 Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation SI7844DP-T1-E3 vs FDD2572
FDD2572 4A, 150V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC SI7844DP-T1-E3 vs FDD2572

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