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Part Details for SI7846DP-T1-E3 by Vishay Intertechnologies
Overview of SI7846DP-T1-E3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7846DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73W9420
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Newark | Mosfet, N Channel, 150V, 0.041Ohm, 4A, Powerpak So, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.9Wrohs Compliant: Yes |Vishay SI7846DP-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1900 / $1.2300 | Buy Now |
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DISTI #
90AJ5059
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Newark | Power Field-Effect Transistor, 4A I(D), 150V, 0.05Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet |Vishay SI7846DP-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.5900 / $2.6100 | Buy Now |
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DISTI #
06J8169
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Newark | N Channel Mosfet, 150V, 6.7A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:6.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Vishay SI7846DP-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.6000 | Buy Now |
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DISTI #
781-SI7846DP-E3
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Mouser Electronics | MOSFET 150V 50MOHMS@10V PWM RoHS: Compliant | 5103 |
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$1.1200 / $2.3500 | Buy Now |
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Future Electronics | Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$1.0400 | Buy Now |
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Future Electronics | Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.8900 | Buy Now |
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Bristol Electronics | 6000 |
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RFQ | ||
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Bristol Electronics | 794 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 150V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4800 |
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$1.4250 / $3.8000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 150V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 35 |
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$2.0900 / $3.8000 | Buy Now |
Part Details for SI7846DP-T1-E3
SI7846DP-T1-E3 CAD Models
SI7846DP-T1-E3 Part Data Attributes
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SI7846DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7846DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | FAST SWITCHING | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7846DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7846DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7846DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7846DP-T1-GE3 | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7846DP-T1-E3 vs SI7846DP-T1-GE3 |