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Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7850DP-T1-E3
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Avnet Americas | Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.6004 / $0.7627 | Buy Now |
DISTI #
781-SI7850DP-E3
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Mouser Electronics | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 8662 |
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$0.8650 / $1.7400 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 66000Reel |
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$0.6700 / $0.6950 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6700 / $0.6950 | Buy Now |
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Future Electronics | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6450 / $0.6700 | Buy Now |
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Bristol Electronics | 4022 |
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RFQ | ||
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Quest Components | 6.2 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET | 2368 |
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$1.4835 / $3.9560 | Buy Now |
DISTI #
SI7850DP-T1-E3
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TTI | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 48000 In Stock |
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$0.6710 / $0.7000 | Buy Now |
DISTI #
SI7850DP-T1-E3.
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TTI | MOSFET 60V 10.3A 4.5W pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape | Americas - 0 |
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$0.9400 | Buy Now |
DISTI #
SI7850DP-T1-E3
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Avnet Americas | Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.6004 / $0.7627 | Buy Now |
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SI7850DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7850DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | POWERPAK, SO-8 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 74 ns | |
Turn-on Time-Max (ton) | 40 ns |
This table gives cross-reference parts and alternative options found for SI7850DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7850DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7850DP | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Siliconix | SI7850DP-T1-E3 vs SI7850DP |
SI7850DP-T1-GE3 | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Intertechnologies | SI7850DP-T1-E3 vs SI7850DP-T1-GE3 |