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Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7850DP-T1-E3CT-ND
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DigiKey | MOSFET N-CH 60V 6.2A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11189 In Stock |
|
$0.8069 / $1.9200 | Buy Now |
DISTI #
70026127
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RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.018Ohm, ID 6.2A, PowerPAK SO-8,PD 1.8W,-55C | Siliconix / Vishay SI7850DP-T1-E3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2663 |
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$1.4800 / $1.7400 | Buy Now |
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New Advantage Corporation | Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 138000 |
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$0.7733 / $0.8286 | Buy Now |
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SI7850DP-T1-E3
Vishay Siliconix
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Datasheet
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SI7850DP-T1-E3
Vishay Siliconix
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
|
Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 74 ns | |
Turn-on Time-Max (ton) | 40 ns |
This table gives cross-reference parts and alternative options found for SI7850DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7850DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7850DP-T1-E3 | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Intertechnologies | SI7850DP-T1-E3 vs SI7850DP-T1-E3 |
SI7850DP | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Siliconix | SI7850DP-T1-E3 vs SI7850DP |
SI7850DP-T1-GE3 | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 | Vishay Intertechnologies | SI7850DP-T1-E3 vs SI7850DP-T1-GE3 |