Datasheets
SI7850DP-T1-E3 by:

Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R

Part Details for SI7850DP-T1-E3 by Vishay Siliconix

Overview of SI7850DP-T1-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI7850DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7850DP-T1-E3CT-ND
DigiKey MOSFET N-CH 60V 6.2A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 11189
In Stock
  • 1 $1.9200
  • 10 $1.5970
  • 100 $1.2713
  • 500 $1.0757
  • 1,000 $0.9127
  • 3,000 $0.8671
  • 6,000 $0.8345
  • 9,000 $0.8069
$0.8069 / $1.9200 Buy Now
DISTI # 70026127
RS MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.018Ohm, ID 6.2A, PowerPAK SO-8,PD 1.8W,-55C | Siliconix / Vishay SI7850DP-T1-E3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 2663
  • 1 $1.7400
  • 10 $1.6500
  • 50 $1.5700
  • 100 $1.4800
$1.4800 / $1.7400 Buy Now
New Advantage Corporation Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 138000
  • 3,000 $0.8286
  • 138,000 $0.7733
$0.7733 / $0.8286 Buy Now

Part Details for SI7850DP-T1-E3

SI7850DP-T1-E3 CAD Models

SI7850DP-T1-E3 Part Data Attributes

SI7850DP-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7850DP-T1-E3 Vishay Siliconix Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 74 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for SI7850DP-T1-E3

This table gives cross-reference parts and alternative options found for SI7850DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7850DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7850DP-T1-E3 Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Intertechnologies SI7850DP-T1-E3 vs SI7850DP-T1-E3
SI7850DP Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Siliconix SI7850DP-T1-E3 vs SI7850DP
SI7850DP-T1-GE3 Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Intertechnologies SI7850DP-T1-E3 vs SI7850DP-T1-GE3
Part Number Description Manufacturer Compare
SI7850DP-T1-E3 Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Intertechnologies SI7850DP-T1-E3 vs SI7850DP-T1-E3
SI7850DP-T1-GE3 Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Intertechnologies SI7850DP-T1-E3 vs SI7850DP-T1-GE3
SI7850DP Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8 Vishay Siliconix SI7850DP-T1-E3 vs SI7850DP

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