Datasheets
SI7884BDP-T1-GE3 by:

Power Field-Effect Transistor, 58A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SI7884BDP-T1-GE3 by Vishay Intertechnologies

Overview of SI7884BDP-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI7884BDP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7884BDP-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7884BDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.9151
  • 6,000 $0.8858
  • 12,000 $0.8564
  • 18,000 $0.8271
  • 24,000 $0.7951
  • 30,000 $0.7577
  • 300,000 $0.7204
$0.7204 / $0.9151 Buy Now
DISTI # 781-SI7884BDP-T1-GE3
Mouser Electronics MOSFET 40V 58A 46W 7.5mohm @ 10V RoHS: Compliant 9602
  • 1 $1.9200
  • 10 $1.6000
  • 100 $1.2800
  • 500 $1.2400
$1.2400 / $1.9200 Buy Now
Future Electronics N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.7900
$0.7900 Buy Now
Future Electronics N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.7900
$0.7900 Buy Now
DISTI # SI7884BDP-T1-GE3
TTI MOSFET 40V 58A 46W 7.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 3000
In Stock
  • 3,000 $0.8700
$0.8700 Buy Now
DISTI # SI7884BDP-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7884BDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.9151
  • 6,000 $0.8858
  • 12,000 $0.8564
  • 18,000 $0.8271
  • 24,000 $0.7951
  • 30,000 $0.7577
  • 300,000 $0.7204
$0.7204 / $0.9151 Buy Now
DISTI # SI7884BDP-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7884BDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.9151
  • 6,000 $0.8858
  • 12,000 $0.8564
  • 18,000 $0.8271
  • 24,000 $0.7951
  • 30,000 $0.7577
  • 300,000 $0.7204
$0.7204 / $0.9151 Buy Now
CHIPMALL.COM LIMITED Package/EnclosureSOIC-8 fet typeN-Channel Operating temperature-55C~150CTJ Gate voltage Vgs20V Drain-source voltage Vds40V 17500
  • 7 $1.2308
  • 100 $1.0260
  • 750 $0.9481
  • 1,500 $0.9041
  • 3,000 $0.8617
$0.8617 / $1.2308 Buy Now
DISTI # SI7884BDP-T1-GE3
EBV Elektronik Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R (Alt: SI7884BDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now

Part Details for SI7884BDP-T1-GE3

SI7884BDP-T1-GE3 CAD Models

SI7884BDP-T1-GE3 Part Data Attributes

SI7884BDP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7884BDP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 58A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code compliant
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 58 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 142 pF
JESD-30 Code R-PDSO-N8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 77 ns
Turn-on Time-Max (ton) 66 ns

Alternate Parts for SI7884BDP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7884BDP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7884BDP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7884BDP-T1-E3 TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SI7884BDP-T1-GE3 vs SI7884BDP-T1-E3
SI7884BDP-T1-GE3 TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SI7884BDP-T1-GE3 vs SI7884BDP-T1-GE3
Part Number Description Manufacturer Compare
SI7884BDP-T1-GE3 TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SI7884BDP-T1-GE3 vs SI7884BDP-T1-GE3

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