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Part Details for SI7884BDP-T1-GE3 by Vishay Siliconix
Overview of SI7884BDP-T1-GE3 by Vishay Siliconix
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7884BDP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7884BDP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 58A PPAK SO-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3425 In Stock |
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$0.8069 / $1.9200 | Buy Now |
Part Details for SI7884BDP-T1-GE3
SI7884BDP-T1-GE3 CAD Models
SI7884BDP-T1-GE3 Part Data Attributes
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SI7884BDP-T1-GE3
Vishay Siliconix
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Datasheet
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Compare Parts:
SI7884BDP-T1-GE3
Vishay Siliconix
TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 142 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 77 ns | |
| Turn-on Time-Max (ton) | 66 ns |
Alternate Parts for SI7884BDP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7884BDP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7884BDP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7884BDP-T1-E3 | TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SI7884BDP-T1-GE3 vs SI7884BDP-T1-E3 |
| SI7884BDP-T1-GE3 | Power Field-Effect Transistor, 58A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI7884BDP-T1-GE3 vs SI7884BDP-T1-GE3 |