Part Details for SI7892BDP-T1-GE3 by Vishay Siliconix
Overview of SI7892BDP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7892BDP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7892BDP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 15A PPAK SO-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1517 In Stock |
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$0.7666 / $1.8300 | Buy Now |
Part Details for SI7892BDP-T1-GE3
SI7892BDP-T1-GE3 CAD Models
SI7892BDP-T1-GE3 Part Data Attributes:
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SI7892BDP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7892BDP-T1-GE3
Vishay Siliconix
TRANSISTOR 15 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for SI7892BDP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7892BDP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7892BDP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI7892BDP-T1-GE3 | Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7892BDP-T1-GE3 vs SI7892BDP-T1-GE3 |
SI7892BDP-T1-E3 | Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7892BDP-T1-GE3 vs SI7892BDP-T1-E3 |