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Transistors / Power Field-Effect Transistors / SI7898DP-T1-E3
Datasheets
SI7898DP-T1-E3 by:

Power Field-Effect Transistor, 3A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Part Details for SI7898DP-T1-E3 by Vishay Intertechnologies

Overview of SI7898DP-T1-E3 by Vishay Intertechnologies

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

Price & Stock for SI7898DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J8174
Newark N Channel Mosfet, 150V, 4.8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:4.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7898DP-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.0200
$1.0200 Buy Now
DISTI # SI7898DP-T1-E3
Avnet Americas N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI7898DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.7575
  • 6,000 $0.7257
  • 12,000 $0.7143
  • 18,000 $0.7024
  • 24,000 $0.6941
$0.6941 / $0.7575 Buy Now
Bristol Electronics   8760
RFQ
DISTI # SI7898DP-T1-E3
EBV Elektronik (Alt: SI7898DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7898DP-T1-E3

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SI7898DP-T1-E3 Part Data Attributes

Parametric Data
SI7898DP-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7898DP-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 3A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7898DP-T1-E3

This table gives cross-reference parts and alternative options found for SI7898DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7898DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7898DP-T1-E3 Vishay Siliconix Check for Price Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R SI7898DP-T1-E3 vs SI7898DP-T1-E3
SI7898DP Vishay Siliconix Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, SI7898DP-T1-E3 vs SI7898DP

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