Part Details for SI7964DP-T1-GE3 by Vishay Intertechnologies
Overview of SI7964DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SI7964DP-T1-GE3
SI7964DP-T1-GE3 CAD Models
SI7964DP-T1-GE3 Part Data Attributes
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SI7964DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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SI7964DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 31 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.1 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for SI7964DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7964DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7964DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI7964DP-T1-E3 | Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7964DP-T1-GE3 vs SI7964DP-T1-E3 |
SI7964DP-T1-E3 | Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R | Vishay Siliconix | SI7964DP-T1-GE3 vs SI7964DP-T1-E3 |