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Transistors / Power Field-Effect Transistors / SI7997DP-T1-GE3
Datasheets
SI7997DP-T1-GE3 by:

Trans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R

Part Details for SI7997DP-T1-GE3 by Vishay Siliconix

Overview of SI7997DP-T1-GE3 by Vishay Siliconix

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

Price & Stock for SI7997DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7997DP-T1-GE3CT-ND
DigiKey MOSFET 2P-CH 30V 60A PPAK SO8 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 11989
In Stock
  • 1 $2.1200
  • 10 $1.7570
  • 100 $1.3983
  • 500 $1.1832
  • 1,000 $1.0039
  • 3,000 $0.9537
  • 6,000 $0.9179
  • 9,000 $0.8875
$0.8875 / $2.1200 Buy Now
DISTI # 70459570
RS -30V 5.5mOhm@10V 60A P-Ch G-III | Siliconix / Vishay SI7997DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $2.1200
  • 30,000 $2.0100
  • 150,000 $1.9100
  • 300,000 $1.8000
$1.8000 / $2.1200 RFQ
Quest Components 60A, 30V, 0.0078OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET 67
  • 1 $3.0240
  • 12 $1.8900
  • 41 $1.6632
$1.6632 / $3.0240 Buy Now
New Advantage Corporation Dual P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $2.3000
  • 12,000 $2.1500
$2.1500 / $2.3000 Buy Now

Part Details for SI7997DP-T1-GE3

SI7997DP-T1-GE3 Part Data Attributes:

Parametric Data
SI7997DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7997DP-T1-GE3 Vishay Siliconix Trans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 46 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for SI7997DP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7997DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7997DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI7997DP-T1-GE3 Power Field-Effect Transistor, 60A I(D), 30V, 0.0078ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7997DP-T1-GE3 vs SI7997DP-T1-GE3
SI7945DP-T1-GE3 Power Field-Effect Transistor, 7A I(D), 30V, 0.02ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SI7997DP-T1-GE3 vs SI7945DP-T1-GE3

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