SI8851EDB-T2-E1
Description: Power Field-Effect Transistor

Overview of SI8851EDB-T2-E1 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 7 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Automotive

Available Datasheets

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Price & Stock for SI8851EDB-T2-E1 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 29X6572
Newark Mosfet, P Channel, -20V, -16.7A, Micro Foot, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:16.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI8851EDB-T2-E1 RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.2720
$0.2720 Buy Now
DISTI # 29X6573
Newark Mosfet, P Channel, -20V, -16.7A, Micro Foot, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:16.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI8851EDB-T2-E1 RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.2720
  • 10,000 $0.2520
  • 20,000 $0.2340
  • 30,000 $0.2180
  • 50,000 $0.2090
$0.2090 / $0.2720 Buy Now
DISTI # SI8851EDB-T2-E1
Avnet Americas Trans MOSFET P-CH 20V 16.7A 30-Pin Power Micro Foot T/R - Tape and Reel (Alt: SI8851EDB-T2-E1) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1940
$0.1940 Buy Now
DISTI # 78-SI8851EDB-T2-E1
Mouser Electronics MOSFETs -20V Vds 8V Vgs MICROFOOT RoHS: Compliant 3000
  • 1 $0.5900
  • 10 $0.5190
  • 100 $0.3590
  • 500 $0.2990
  • 1,000 $0.2550
  • 3,000 $0.2270
  • 6,000 $0.2260
$0.2260 / $0.5900 Buy Now
Future Electronics MOSFET -20V .0080ohm@-4.5V -16.7A P-Ch RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks 0
  • 6,000 $0.2080
$0.2080 Buy Now
DISTI # SI8851EDB-T2-E1
TTI MOSFETs -20V Vds 8V Vgs MICROFOOT RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.2200
  • 9,000 $0.2070
  • 15,000 $0.2030
  • 30,000 $0.1990
$0.1990 / $0.2200 Buy Now
DISTI # SI8851EDB-T2-E1
EBV Elektronik (Alt: SI8851EDB-T2-E1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SI8851EDB-T2-E1 by Vishay Intertechnologies
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Part Data Attributes for SI8851EDB-T2-E1 by Vishay Intertechnologies

SI8851EDB-T2-E1
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
GRID ARRAY, R-PBGA-B30
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
19 Weeks
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain-source On Resistance-Max
0.0086 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PBGA-B30
Number of Elements
1
Number of Terminals
30
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
80 A
Surface Mount
YES
Terminal Form
BALL
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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