Part Details for SI9948AEY-T1-E3 by Vishay Intertechnologies
Overview of SI9948AEY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for SI9948AEY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85W2238
|
Newark | Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:2.6A, Drain Source On State Resistance N Channel:- Rohs Compliant: Yes |Vishay SI9948AEY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
|
Bristol Electronics | 195 |
|
RFQ | ||
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 2.6A I(D), 60V, 0.17OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | 846 |
|
$1.9470 / $3.5400 | Buy Now |
|
|
ComSIT USA | DUAL P-CHANNEL 60-V (D-S), 175 DEGREE CELCIUS MOSFET Power Field-Effect Transistor RoHS: Compliant | Europe - 3597 |
|
RFQ | |
|
|
Perfect Parts Corporation | 4622 |
|
RFQ |
Part Details for SI9948AEY-T1-E3
SI9948AEY-T1-E3 CAD Models
SI9948AEY-T1-E3 Part Data Attributes
|
|
SI9948AEY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI9948AEY-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.4 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 40 ns |