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Part Details for SIA427DJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA427DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Communication and Networking
Price & Stock for SIA427DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA427DJ-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.1688 / $0.2144 | Buy Now |
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DISTI #
SIA427DJ-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1688 / $0.2087 | Buy Now |
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DISTI #
781-SIA427DJ-T1-GE3
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Mouser Electronics | MOSFET 8V 12A 19W 13mohms @ 4.5V RoHS: Compliant | 183455 |
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$0.1640 / $0.5500 | Buy Now |
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Future Electronics | Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$1.0800 | Buy Now |
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Future Electronics | Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1600 / $0.1710 | Buy Now |
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DISTI #
SIA427DJ-T1-GE3
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TTI | MOSFET 8V 12A 19W 13mohms @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.1600 / $0.1750 | Buy Now |
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DISTI #
SIA427DJ-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.1688 / $0.2144 | Buy Now |
|
DISTI #
SIA427DJ-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1688 / $0.2087 | Buy Now |
|
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Chip 1 Exchange | INSTOCK | 3900 |
|
RFQ | |
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Chip1Cloud | Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET P-CH 8V 12A SC-70-6 | 1182 |
|
RFQ |
Part Details for SIA427DJ-T1-GE3
SIA427DJ-T1-GE3 CAD Models
SIA427DJ-T1-GE3 Part Data Attributes:
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SIA427DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA427DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 8V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-70, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 690 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 165 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for SIA427DJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIA427DJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA427DJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIA427ADJ-T1-GE3 | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | Vishay Intertechnologies | SIA427DJ-T1-GE3 vs SIA427ADJ-T1-GE3 |