Part Details for SIA433EDJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA433EDJ-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
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Applications
Consumer Electronics
Security and Surveillance
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIA433EDJ-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA433EDJ-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2430 / $0.3087 | Buy Now |
DISTI #
781-SIA433EDJ-GE3
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Mouser Electronics | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 8165 |
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$0.2250 / $0.6800 | Buy Now |
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Future Electronics | SiA433EDJ Series P-Channel 20 V 15 mOhm 19 W SMT Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2450 / $0.2600 | Buy Now |
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Future Electronics | SiA433EDJ Series P-Channel 20 V 15 mOhm 19 W SMT Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2450 / $0.2600 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
DISTI #
SIA433EDJ-T1-GE3
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TTI | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.2150 / $0.2590 | Buy Now |
DISTI #
SIA433EDJ-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
|
$0.2322 / $0.2556 | Buy Now |
DISTI #
SIA433EDJ-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2430 / $0.3087 | Buy Now |
DISTI #
SIA433EDJ-T1-GE3
|
TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -12A, Idm: -50A Min Qty: 3000 | 0 |
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$0.3830 | RFQ |
DISTI #
SIA433EDJ-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
|
$0.2322 / $0.2556 | Buy Now |
Part Details for SIA433EDJ-T1-GE3
SIA433EDJ-T1-GE3 CAD Models
SIA433EDJ-T1-GE3 Part Data Attributes
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SIA433EDJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA433EDJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 20V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 19 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |