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SIA433EDJ-T1-GE3 by:

P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel

Part Details for SIA433EDJ-T1-GE3 by Vishay Siliconix

Overview of SIA433EDJ-T1-GE3 by Vishay Siliconix

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Applications Consumer Electronics Security and Surveillance Space Technology Internet of Things (IoT) Environmental Monitoring Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Price & Stock for SIA433EDJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIA433EDJ-T1-GE3CT-ND
DigiKey MOSFET P-CH 20V 12A PPAK SC70-6 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 9398
In Stock
  • 1 $0.6800
  • 10 $0.5910
  • 100 $0.4090
  • 500 $0.3418
  • 1,000 $0.2909
  • 3,000 $0.2591
  • 6,000 $0.2454
  • 9,000 $0.2273
  • 30,000 $0.2250
$0.2250 / $0.6800 Buy Now
DISTI # 70459574
RS -20V 18mOhm@4.5V 12A P-Ch G-III | Siliconix / Vishay SIA433EDJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.6800
  • 30,000 $0.6500
  • 150,000 $0.6100
  • 300,000 $0.5800
$0.5800 / $0.6800 RFQ

Part Details for SIA433EDJ-T1-GE3

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SIA433EDJ-T1-GE3 Part Data Attributes

SIA433EDJ-T1-GE3 Vishay Siliconix
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SIA433EDJ-T1-GE3 Vishay Siliconix P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SC-70
Package Description SMALL OUTLINE, S-XDSO-N3
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 19 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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