Datasheets
SIA441DJ-T1-GE3 by:

TRANSISTOR 12 A, 40 V, 0.047 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6, FET General Purpose Power

Part Details for SIA441DJ-T1-GE3 by Vishay Siliconix

Overview of SIA441DJ-T1-GE3 by Vishay Siliconix

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Price & Stock for SIA441DJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIA441DJ-T1-GE3CT-ND
DigiKey MOSFET P-CH 40V 12A PPAK SC70-6 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 40236
In Stock
  • 1 $0.6600
  • 10 $0.5630
  • 100 $0.3913
  • 500 $0.3055
  • 1,000 $0.2483
  • 3,000 $0.2220
  • 6,000 $0.2107
  • 9,000 $0.1956
  • 30,000 $0.1911
$0.1911 / $0.6600 Buy Now
DISTI # 70459576
RS MOSFET P-CH 40V 12A SC-70 | Siliconix / Vishay SIA441DJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.5630
  • 30,000 $0.5350
  • 150,000 $0.5070
  • 300,000 $0.4780
$0.4780 / $0.5630 RFQ

Part Details for SIA441DJ-T1-GE3

SIA441DJ-T1-GE3 CAD Models

SIA441DJ-T1-GE3 Part Data Attributes

SIA441DJ-T1-GE3 Vishay Siliconix
Buy Now Datasheet
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SIA441DJ-T1-GE3 Vishay Siliconix TRANSISTOR 12 A, 40 V, 0.047 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SC-70
Package Description SMALL OUTLINE, S-PDSO-N3
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 8.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 19 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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