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Part Details for SIAA00DJ-T1-GE3 by Vishay Intertechnologies
Overview of SIAA00DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIAA00DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59AC7301
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Newark | N-Channel 25-V (D-S) Mosfet |Vishay SIAA00DJ-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2410 / $0.3140 | Buy Now |
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DISTI #
78AC6483
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Newark | Mosfet, N-Ch, 25V, 40A, 150Deg C, 19.2W, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SIAA00DJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.3450 / $0.8990 | Buy Now |
|
DISTI #
SIAA00DJ-T1-GE3
|
Avnet Americas | N-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SIAA00DJ-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.2238 | Buy Now |
|
DISTI #
78-SIAA00DJ-T1-GE3
|
Mouser Electronics | MOSFETs 25V Vds 16V Vgs PowerPAK SC-70 RoHS: Compliant | 0 |
|
$0.2270 / $0.5900 | Order Now |
|
|
Future Electronics | Single N-Ch 25 V 5.6 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK SC-70 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.2350 / $0.2500 | Buy Now |
|
|
Onlinecomponents.com | MOSFET Transistor - N-Channel - 25V Drain to Source Voltage - 20.1A(Ta) / 40A(Tc) Continuous Drain Current - +16V/-12V Vgs - PowerPAK SC-70-6 Package. RoHS: Compliant |
3000 Partner Stock |
|
$0.2380 / $0.2810 | Buy Now |
|
DISTI #
SIAA00DJ-T1-GE3
|
TTI | MOSFETs 25V Vds 16V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.2280 / $0.2440 | Buy Now |
|
DISTI #
SIAA00DJ-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 25V, 40A, Idm: 80A Min Qty: 3000 | 0 |
|
$0.3700 | RFQ |
|
|
Chip 1 Exchange | INSTOCK | 3900 |
|
RFQ | |
|
DISTI #
C1S803608454581
|
Chip1Stop | MOSFET RoHS: Compliant | 3000 |
|
$0.5110 / $0.5430 | Buy Now |
Part Details for SIAA00DJ-T1-GE3
SIAA00DJ-T1-GE3 CAD Models
SIAA00DJ-T1-GE3 Part Data Attributes
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SIAA00DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIAA00DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 19.2 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 65 ns | |
| Turn-on Time-Max (ton) | 130 ns |