Datasheets
SIAA40DJ-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SIAA40DJ-T1-GE3 by Vishay Intertechnologies

Overview of SIAA40DJ-T1-GE3 by Vishay Intertechnologies

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Transportation and Logistics Agriculture Technology Medical Imaging Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Aerospace and Defense Healthcare Renewable Energy Robotics and Drones

Price & Stock for SIAA40DJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIAA40DJ-T1-GE3
Avnet Americas MOSFET N-Channel 40V 30A 7-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIAA40DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2941
  • 6,000 $0.2847
  • 12,000 $0.2753
  • 18,000 $0.2641
  • 24,000 $0.2555
  • 30,000 $0.2435
  • 300,000 $0.2315
$0.2315 / $0.2941 Buy Now
DISTI # 78-SIAA40DJ-T1-GE3
Mouser Electronics MOSFET 40V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant 4658
  • 1 $0.5600
  • 10 $0.4890
  • 100 $0.3510
  • 500 $0.3030
  • 1,000 $0.2620
  • 3,000 $0.2400
  • 6,000 $0.2330
  • 9,000 $0.2160
  • 24,000 $0.2120
$0.2120 / $0.5600 Buy Now
DISTI # V72:2272_17583351
Arrow Electronics Trans MOSFET N-CH 40V 30A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 44 Weeks Date Code: 2241 Container: Cut Strips Americas - 1645
  • 1 $0.3593
  • 10 $0.3360
  • 25 $0.3342
  • 50 $0.3325
  • 100 $0.2771
  • 250 $0.2743
  • 500 $0.2563
  • 1,000 $0.2302
$0.2302 / $0.3593 Buy Now
Future Electronics N-Channel 40 V 12.5 mOhm 19.2 W TrenchFET Gen IV Mosfet - PowerPAK-SC70-6L RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2250
  • 6,000 $0.2200
  • 9,000 $0.2200
  • 12,000 $0.2150
  • 15,000 $0.2100
$0.2100 / $0.2250 Buy Now
Future Electronics N-Channel 40 V 12.5 mOhm 19.2 W TrenchFET Gen IV Mosfet - PowerPAK-SC70-6L RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks Container: Reel 0
Reel
  • 3,000 $0.2250
  • 6,000 $0.2200
  • 9,000 $0.2200
  • 12,000 $0.2150
  • 15,000 $0.2100
$0.2100 / $0.2250 Buy Now
DISTI # 64962494
Verical Trans MOSFET N-CH 40V 30A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 26 Package Multiple: 1 Date Code: 2241 Americas - 1645
  • 26 $0.3342
  • 50 $0.3325
  • 100 $0.2771
  • 250 $0.2743
  • 500 $0.2563
  • 1,000 $0.2302
$0.2302 / $0.3342 Buy Now
DISTI # SIAA40DJ-T1-GE3
TTI MOSFET 40V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 24000
In Stock
  • 3,000 $0.2380
  • 6,000 $0.2310
  • 9,000 $0.2140
  • 30,000 $0.2100
$0.2100 / $0.2380 Buy Now
DISTI # SIAA40DJ-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 30A, Idm: 60A Min Qty: 3000 0
  • 3,000 $0.4760
$0.4760 RFQ

Part Details for SIAA40DJ-T1-GE3

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SIAA40DJ-T1-GE3 Part Data Attributes

SIAA40DJ-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIAA40DJ-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, S-PDSO-N3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 38 Weeks
Date Of Intro 2016-09-25
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIAA40DJ-T1-GE3

This table gives cross-reference parts and alternative options found for SIAA40DJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIAA40DJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ165N04NSGATMA1 Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8 Infineon Technologies AG SIAA40DJ-T1-GE3 vs BSZ165N04NSGATMA1
BSZ165N04NSG Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8 Infineon Technologies AG SIAA40DJ-T1-GE3 vs BSZ165N04NSG

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