Part Details for SIB419DK-T1-GE3 by Vishay Siliconix
Overview of SIB419DK-T1-GE3 by Vishay Siliconix
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Medical Imaging
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Robotics and Drones
Available Datasheets
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ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Part Details for SIB419DK-T1-GE3
SIB419DK-T1-GE3 CAD Models
SIB419DK-T1-GE3 Part Data Attributes
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SIB419DK-T1-GE3
Vishay Siliconix
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Datasheet
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SIB419DK-T1-GE3
Vishay Siliconix
Power Field-Effect Transistor, 5.2A I(D), 12V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-75, POWERPAK-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SC-75 | |
Package Description | SMALL OUTLINE, S-XDSO-N3 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |