Part Details for SIDR402DP-T1-GE3 by Vishay Intertechnologies
Overview of SIDR402DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIDR402DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AC6501
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Newark | Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.00073Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.3V, Powerrohs Compliant: Yes |Vishay SIDR402DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11589 |
|
$1.0100 / $2.5400 | Buy Now |
|
DISTI #
59AC7336
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SIDR402DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0600 / $1.1000 | Buy Now |
|
DISTI #
SIDR402DP-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 40V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR402DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.0109 | Buy Now |
|
DISTI #
78-SIDR402DP-T1-GE3
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Mouser Electronics | MOSFETs 40V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant | 3997 |
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$1.0500 / $2.5000 | Buy Now |
|
|
Future Electronics | Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$1.1400 | Buy Now |
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DISTI #
84349546
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Verical | Trans MOSFET N-CH 40V 64.6A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2348 | Americas - 3000 |
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$1.3716 | Buy Now |
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DISTI #
SIDR402DP-T1-GE3
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TTI | MOSFETs 40V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$1.0500 / $1.1700 | Buy Now |
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DISTI #
SIDR402DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 100A, Idm: 400A Min Qty: 3000 | 0 |
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$1.6000 | RFQ |
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DISTI #
C1S803606372548
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Chip1Stop | MOSFET RoHS: Compliant | 3000 |
|
$1.1700 | Buy Now |
|
DISTI #
SIDR402DP-T1-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 40V 100A 8-Pin PowerPAK SO (Alt: SIDR402DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIDR402DP-T1-GE3
SIDR402DP-T1-GE3 CAD Models
SIDR402DP-T1-GE3 Part Data Attributes
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|
SIDR402DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIDR402DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.00088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 210 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 192 ns | |
| Turn-on Time-Max (ton) | 290 ns |