Part Details for SIDR610DP-T1-GE3 by Vishay Intertechnologies
Overview of SIDR610DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIDR610DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
99AC0534
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Newark | Mosfet, Nch, 200V, 39.6A, 125W Rohs Compliant: Yes |Vishay SIDR610DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.9800 / $3.9300 | Buy Now |
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DISTI #
81AC3429
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Newark | N-Channel 200-V (D-S) Mosfet |Vishay SIDR610DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.5900 / $1.8000 | Buy Now |
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DISTI #
SIDR610DP-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 200V 39.6A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR610DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$1.6585 / $2.1069 | Buy Now |
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DISTI #
78-SIDR610DP-T1-GE3
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Mouser Electronics | MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC RoHS: Compliant | 0 |
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$1.6200 / $3.3900 | Order Now |
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Future Electronics | N-Channel 200 V (D-S) MOSFET PowerPAK SO-8 double cooling 33M dual trench 2mil , RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.5400 | Buy Now |
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Bristol Electronics | 1802 |
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RFQ | ||
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DISTI #
SIDR610DP-T1-GE3
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TTI | MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$1.5700 | Buy Now |
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DISTI #
SIDR610DP-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 200V 39.6A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR610DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$1.6585 / $2.1069 | Buy Now |
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DISTI #
SIDR610DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 39.6A, Idm: 80A Min Qty: 3000 | 0 |
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$2.2900 | RFQ |
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DISTI #
3014141
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element14 Asia-Pacific | MOSFET, N-CH, 200V, 39.6A, 125W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 1815 |
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$2.3251 / $3.6020 | Buy Now |
Part Details for SIDR610DP-T1-GE3
SIDR610DP-T1-GE3 CAD Models
SIDR610DP-T1-GE3 Part Data Attributes:
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|
SIDR610DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIDR610DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 39.6 A | |
| Drain-source On Resistance-Max | 0.0334 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 84 ns | |
| Turn-on Time-Max (ton) | 76 ns |