Part Details for SIGC06T65GEX1SA1 by Infineon Technologies AG
Overview of SIGC06T65GEX1SA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Internet of Things (IoT)
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Price & Stock for SIGC06T65GEX1SA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIGC06T65GEX1SA1
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC06T65GEX1SA1) RoHS: Compliant Min Qty: 42570 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
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$0.7869 / $0.8994 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 42570 Package Multiple: 1 Lead time: 20 Weeks | 0 |
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$0.7500 | Buy Now |
Part Details for SIGC06T65GEX1SA1
SIGC06T65GEX1SA1 CAD Models
SIGC06T65GEX1SA1 Part Data Attributes
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SIGC06T65GEX1SA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SIGC06T65GEX1SA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, DIE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | UNCASED CHIP, R-XUUC-N2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE | |
| JESD-30 Code | R-XUUC-N2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON |