Part Details for SIGC121T120R2CSYX1SA1 by Infineon Technologies AG
Overview of SIGC121T120R2CSYX1SA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Internet of Things (IoT)
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
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Price & Stock for SIGC121T120R2CSYX1SA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIGC121T120R2CSYX1
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CSYX1) RoHS: Not Compliant Min Qty: 32 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ |
Part Details for SIGC121T120R2CSYX1SA1
SIGC121T120R2CSYX1SA1 CAD Models
SIGC121T120R2CSYX1SA1 Part Data Attributes
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SIGC121T120R2CSYX1SA1
Infineon Technologies AG
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Datasheet
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SIGC121T120R2CSYX1SA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, DIE
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DIE | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | INTEGRATED GATE RESISTOR | |
Collector Current-Max (IC) | 75 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JESD-30 Code | S-XUUC-N | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON |