Datasheets
SIGC156T120R2CSYX1SA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10

Part Details for SIGC156T120R2CSYX1SA1 by Infineon Technologies AG

Overview of SIGC156T120R2CSYX1SA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIGC156T120R2CSYX1SA1

Part # Distributor Description Stock Price Buy
DISTI # SIGC156T120R2CSYX1
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC156T120R2CSYX1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Waffle Pack 0
RFQ
DISTI # SIGC156T120R2CSYX1
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC156T120R2CSYX1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Waffle Pack 0
RFQ
DISTI # SIGC156T120R2CSYX1
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC156T120R2CSYX1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Waffle Pack 0
RFQ

Part Details for SIGC156T120R2CSYX1SA1

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SIGC156T120R2CSYX1SA1 Part Data Attributes

SIGC156T120R2CSYX1SA1 Infineon Technologies AG
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SIGC156T120R2CSYX1SA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description 12.59 X 12.59 MM, DIE-10
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature INTEGRATED GATE RESISTOR
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JESD-30 Code S-XUUC-N10
Number of Elements 1
Number of Terminals 10
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 390 ns
Turn-on Time-Nom (ton) 190 ns

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