Datasheets
SIGC156T120R2CX1SA4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10

Part Details for SIGC156T120R2CX1SA4 by Infineon Technologies AG

Overview of SIGC156T120R2CX1SA4 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIGC156T120R2CX1SA4

Part # Distributor Description Stock Price Buy
DISTI # SP000012029
EBV Elektronik IGBT CHIPS (Alt: SP000012029) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 4 Days EBV - 0
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Part Details for SIGC156T120R2CX1SA4

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SIGC156T120R2CX1SA4 Part Data Attributes

SIGC156T120R2CX1SA4 Infineon Technologies AG
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SIGC156T120R2CX1SA4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, S-XUUC-N10
Pin Count 10
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 60 Weeks
Additional Feature INTEGRATED GATE RESISTOR
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JESD-30 Code S-XUUC-N10
Number of Elements 1
Number of Terminals 10
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 240 ns

Alternate Parts for SIGC156T120R2CX1SA4

This table gives cross-reference parts and alternative options found for SIGC156T120R2CX1SA4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIGC156T120R2CX1SA4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIGC156T120R2CX1SA1 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 Infineon Technologies AG SIGC156T120R2CX1SA4 vs SIGC156T120R2CX1SA1
SIGC156T120R2C Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 Infineon Technologies AG SIGC156T120R2CX1SA4 vs SIGC156T120R2C
Part Number Description Manufacturer Compare
SIGC156T120R2C Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 Infineon Technologies AG SIGC156T120R2CX1SA4 vs SIGC156T120R2C
SIGC156T120R2CX1SA1 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 Infineon Technologies AG SIGC156T120R2CX1SA4 vs SIGC156T120R2CX1SA1

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