Part Details for SIGC156T120R2CX1SA4 by Infineon Technologies AG
Overview of SIGC156T120R2CX1SA4 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SIGC156T120R2CX1SA4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000012029
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EBV Elektronik | IGBT CHIPS (Alt: SP000012029) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 4 Days | EBV - 0 |
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Part Details for SIGC156T120R2CX1SA4
SIGC156T120R2CX1SA4 CAD Models
SIGC156T120R2CX1SA4 Part Data Attributes
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SIGC156T120R2CX1SA4
Infineon Technologies AG
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Datasheet
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SIGC156T120R2CX1SA4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, S-XUUC-N10 | |
Pin Count | 10 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 60 Weeks | |
Additional Feature | INTEGRATED GATE RESISTOR | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JESD-30 Code | S-XUUC-N10 | |
Number of Elements | 1 | |
Number of Terminals | 10 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 470 ns | |
Turn-on Time-Nom (ton) | 240 ns |
Alternate Parts for SIGC156T120R2CX1SA4
This table gives cross-reference parts and alternative options found for SIGC156T120R2CX1SA4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIGC156T120R2CX1SA4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIGC156T120R2CX1SA1 | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 | Infineon Technologies AG | SIGC156T120R2CX1SA4 vs SIGC156T120R2CX1SA1 |
SIGC156T120R2C | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 12.59 X 12.59 MM, DIE-10 | Infineon Technologies AG | SIGC156T120R2CX1SA4 vs SIGC156T120R2C |