Part Details for SIGC223T120R2CSX1SA3 by Infineon Technologies AG
Overview of SIGC223T120R2CSX1SA3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIGC223T120R2CSX1SA3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SIGC223T120R2CSX1S
|
Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC223T120R2CSX1S) RoHS: Compliant Min Qty: 540 Package Multiple: 1 Container: Waffle Pack | 0 |
|
$23.9098 / $29.0333 | Buy Now |
Part Details for SIGC223T120R2CSX1SA3
SIGC223T120R2CSX1SA3 CAD Models
SIGC223T120R2CSX1SA3 Part Data Attributes:
|
SIGC223T120R2CSX1SA3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SIGC223T120R2CSX1SA3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, DIE
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JESD-30 Code | R-XUUC-N | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 660 ns | |
Turn-on Time-Nom (ton) | 225 ns |