Datasheets
SIGC28T65EX1SA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel

Part Details for SIGC28T65EX1SA1 by Infineon Technologies AG

Overview of SIGC28T65EX1SA1 by Infineon Technologies AG

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Price & Stock for SIGC28T65EX1SA1

Part # Distributor Description Stock Price Buy
DISTI # 448-SIGC28T65EX1SA1-ND
DigiKey IGBT 3 CHIP 600V Lead time: 20 Weeks Container: Bulk Temporarily Out of Stock
Buy Now
DISTI # SIGC28T65EX1SA1
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC28T65EX1SA1) RoHS: Compliant Min Qty: 8766 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack 0
RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 8766 Package Multiple: 1 Lead time: 20 Weeks 0
  • 8,766 $3.5100
$3.5100 Buy Now
DISTI # SP000691748
EBV Elektronik IGBT CHIPS (Alt: SP000691748) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIGC28T65EX1SA1

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SIGC28T65EX1SA1 Part Data Attributes

SIGC28T65EX1SA1 Infineon Technologies AG
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SIGC28T65EX1SA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 650 V
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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