There are no models available for this part yet.
Overview of SIGC42T170R3GEX1SA2 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Internet of Things (IoT)
Industrial Automation
Renewable Energy
Electronic Manufacturing
Communication and Networking
Price & Stock for SIGC42T170R3GEX1SA2 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SIGC42T170R3GEX1SA
|
Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC42T170R3GEX1SA) RoHS: Compliant Min Qty: 5760 Package Multiple: 1 Container: Waffle Pack | 0 |
|
RFQ | ||
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 5760 Package Multiple: 1 | 0 |
|
$6.0700 | Buy Now |
CAD Models for SIGC42T170R3GEX1SA2 by Infineon Technologies AG
Part Data Attributes for SIGC42T170R3GEX1SA2 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
UNCASED CHIP, R-XUUC-N1
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Collector-Emitter Voltage-Max
|
1700 V
|
Configuration
|
SINGLE
|
Gate-Emitter Thr Voltage-Max
|
6.4 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JESD-30 Code
|
R-XUUC-N2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
UNCASED CHIP
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Surface Mount
|
YES
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
UPPER
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
POWER CONTROL
|
Transistor Element Material
|
SILICON
|
VCEsat-Max
|
2.4 V
|