Datasheets
SIHA18N60E-GE3 by:

Power Field-Effect Transistor,

Part Details for SIHA18N60E-GE3 by Vishay Intertechnologies

Overview of SIHA18N60E-GE3 by Vishay Intertechnologies

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Price & Stock for SIHA18N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 78AC6511
Newark Mosfet, N-Ch, 600V, 18A, 150Deg C, 34W, Transistor Polarity:N Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.176Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SIHA18N60E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $3.5200
  • 10 $3.1900
  • 25 $3.0200
  • 50 $2.8400
  • 100 $2.6600
  • 500 $2.3200
$2.3200 / $3.5200 Buy Now
DISTI # SIHA18N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 18A 3-Pin TO-220FP - Tape and Reel (Alt: SIHA18N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.9551
  • 2,000 $1.8924
  • 4,000 $1.8297
  • 6,000 $1.7556
  • 8,000 $1.6986
  • 10,000 $1.6188
  • 100,000 $1.5390
$1.5390 / $1.9551 Buy Now
DISTI # 78-SIHA18N60E-GE3
Mouser Electronics MOSFET N-CHANNEL 600V RoHS: Compliant 872
  • 1 $3.3000
  • 10 $2.9700
  • 25 $2.6200
  • 100 $2.4300
  • 500 $2.0800
  • 1,000 $1.7400
  • 2,000 $1.6900
$1.6900 / $3.3000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 0
  • 1,000 $1.5200
$1.5200 Buy Now
DISTI # SIHA18N60E-GE3
TTI MOSFET N-CHANNEL 600V RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel Americas - 0
Buy Now
DISTI # SIHA18N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 18A 3-Pin TO-220FP - Tape and Reel (Alt: SIHA18N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.9551
  • 2,000 $1.8924
  • 4,000 $1.8297
  • 6,000 $1.7556
  • 8,000 $1.6986
  • 10,000 $1.6188
  • 100,000 $1.5390
$1.5390 / $1.9551 Buy Now
DISTI # SIHA18N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 18A 3-Pin TO-220FP - Tape and Reel (Alt: SIHA18N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.9551
  • 2,000 $1.8924
  • 4,000 $1.8297
  • 6,000 $1.7556
  • 8,000 $1.6986
  • 10,000 $1.6188
  • 100,000 $1.5390
$1.5390 / $1.9551 Buy Now
DISTI # 2932906
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $3.2878
  • 10 $2.7668
  • 100 $2.2384
  • 500 $1.9888
$1.9888 / $3.2878 Buy Now
DISTI # 2932906
Farnell MOSFET, N-CH, 600V, 18A, 150DEG C, 34W RoHS: Compliant Min Qty: 1000 Lead time: 25 Weeks, 1 Days Container: Each 0
  • 1,000 $1.7566
$1.7566 Buy Now

Part Details for SIHA18N60E-GE3

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SIHA18N60E-GE3 Part Data Attributes

SIHA18N60E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHA18N60E-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Avalanche Energy Rating (Eas) 204 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.202 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 45 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 82 ns

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