Part Details for SIHA21N60EF-GE3 by Vishay Intertechnologies
Overview of SIHA21N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHA21N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AC6513
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Newark | Mosfet, N-Ch, 600V, 21A, 150Deg C, 35W, Transistor Polarity:N Channel, Continuous Drain Current Id:21A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.153Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SIHA21N60EF-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2.3100 / $3.0900 | Buy Now |
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DISTI #
SIHA21N60EF-GE3
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Avnet Americas | N-CHANNEL 600V - Tape and Reel (Alt: SIHA21N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$1.7685 | Buy Now |
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DISTI #
78-SIHA21N60EF-GE3
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Mouser Electronics | MOSFETs TO220 600V 9A N-CH MOSFET RoHS: Compliant | 887 |
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$1.8000 / $3.4900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks | 0 |
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$1.9000 | Buy Now |
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DISTI #
SIHA21N60EF-GE3
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TTI | MOSFETs TO220 600V 9A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$1.8000 | Buy Now |
Part Details for SIHA21N60EF-GE3
SIHA21N60EF-GE3 CAD Models
SIHA21N60EF-GE3 Part Data Attributes
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SIHA21N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHA21N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 367 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.176 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 53 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHA21N60EF-GE3
This table gives cross-reference parts and alternative options found for SIHA21N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHA21N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPW20N60S5FKSA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHA21N60EF-GE3 vs SPW20N60S5FKSA1 |
| SIHF22N60E-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | SIHA21N60EF-GE3 vs SIHF22N60E-GE3 |
| TSM60NB190CZC0G | Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Taiwan Semiconductor | SIHA21N60EF-GE3 vs TSM60NB190CZC0G |
| STF25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package | STMicroelectronics | SIHA21N60EF-GE3 vs STF25NM60ND |
| LSD20N65F | Power Field-Effect Transistor, 20A I(D), 650V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | SIHA21N60EF-GE3 vs LSD20N65F |
| TK17A65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHA21N60EF-GE3 vs TK17A65W5 |
| STF21NM60ND | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package | STMicroelectronics | SIHA21N60EF-GE3 vs STF21NM60ND |
| IPA60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | Infineon Technologies AG | SIHA21N60EF-GE3 vs IPA60R190C6XKSA1 |
| SIHP14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHA21N60EF-GE3 vs SIHP14N60E-GE3 |
| SPA20N65C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | SIHA21N60EF-GE3 vs SPA20N65C3XKSA1 |