Part Details for SIHA22N60EL-GE3 by Vishay Intertechnologies
Overview of SIHA22N60EL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIHA22N60EL-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHA22N60EL-GE3
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Avnet Americas | Transistor MOSFET N-CH 600V 21A 3-Pin TO-220FP (Alt: SIHA22N60EL-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days | 0 |
|
$2.0250 / $2.5725 | Buy Now |
DISTI #
78-SIHA22N60EL-GE3
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Mouser Electronics | MOSFET N-CHANNEL600V RoHS: Compliant | 988 |
|
$2.5500 / $4.0200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$2.0000 | Buy Now |
DISTI #
SIHA22N60EL-GE3
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TTI | MOSFET N-CHANNEL600V RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 2000 In Stock |
|
$2.3400 / $2.3800 | Buy Now |
DISTI #
SIHA22N60EL-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 21A 3-Pin TO-220FP (Alt: SIHA22N60EL-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days | 0 |
|
$2.0250 / $2.5725 | Buy Now |
Part Details for SIHA22N60EL-GE3
SIHA22N60EL-GE3 CAD Models
SIHA22N60EL-GE3 Part Data Attributes:
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SIHA22N60EL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHA22N60EL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 286 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.197 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 102 ns | |
Turn-on Time-Max (ton) | 136 ns |