Part Details for SIHB068N60EF-GE3 by Vishay Intertechnologies
Overview of SIHB068N60EF-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIHB068N60EF-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
77AH0216
|
Newark | Mosfet, N-Ch, 600V, 41A, To-263 Rohs Compliant: Yes |Vishay SIHB068N60EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2997 |
|
$3.9800 / $6.2300 | Buy Now |
DISTI #
SIHB068N60EF-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 41A 3-Pin D2PAK (Alt: SIHB068N60EF-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | 0 |
|
$3.6161 | Buy Now |
DISTI #
78-SIHB068N60EF-GE3
|
Mouser Electronics | MOSFET 600V N-CHANNEL RoHS: Compliant | 1384 |
|
$2.5900 / $5.4500 | Buy Now |
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Container: Bag | 0Bag |
|
$2.6700 / $3.1000 | Buy Now |
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Container: Bag | 0Bag |
|
$2.6700 / $3.1000 | Buy Now |
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$2.6700 / $3.2000 | Buy Now |
DISTI #
SIHB068N60EF-GE3
|
TTI | MOSFET 600V N-CHANNEL RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 5000 In Stock |
|
$2.5600 / $2.7200 | Buy Now |
DISTI #
SIHB068N60EF-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 41A 3-Pin D2PAK (Alt: SIHB068N60EF-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | 0 |
|
$3.6161 | Buy Now |
DISTI #
SIHB068N60EF-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 26A, Idm: 115A, 250W Min Qty: 1 | 0 |
|
$4.0500 / $6.0800 | RFQ |
DISTI #
SIHB068N60EF-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 41A 3-Pin D2PAK (Alt: SIHB068N60EF-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | 0 |
|
$3.6161 | Buy Now |
Part Details for SIHB068N60EF-GE3
SIHB068N60EF-GE3 CAD Models
SIHB068N60EF-GE3 Part Data Attributes
|
SIHB068N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHB068N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 226 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 41 A | |
Drain-source On Resistance-Max | 0.068 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 115 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 150 ns | |
Turn-on Time-Max (ton) | 137 ns |