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Power Field-Effect Transistor, 35A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB080N60E-GE3
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Avnet Americas | Power MOSFET, N Channel, 600 V, 35 A, 80 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount - Rail/Tube (Alt: SIHB080N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Tube | 2000 |
|
$2.5155 / $2.7690 | Buy Now |
DISTI #
78-SIHB080N60E-GE3
|
Mouser Electronics | MOSFET E Series Power MOSFET, 80mO 10V RoHS: Compliant | 4660 |
|
$2.5400 / $5.2200 | Buy Now |
DISTI #
SIHB080N60E-GE3
|
Avnet Americas | Power MOSFET, N Channel, 600 V, 35 A, 80 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount - Rail/Tube (Alt: SIHB080N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Tube | 2000 |
|
$2.5155 / $2.7690 | Buy Now |
DISTI #
SIHB080N60E-GE3
|
Avnet Americas | Power MOSFET, N Channel, 600 V, 35 A, 80 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount - Rail/Tube (Alt: SIHB080N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Tube | 2000 |
|
$2.5155 / $2.7690 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SIHB080N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIHB080N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 35A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | unknown | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 226 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 227 W | |
Pulsed Drain Current-Max (IDM) | 96 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 136 ns | |
Turn-on Time-Max (ton) | 206 ns |