There are no models available for this part yet.
Overview of SIHB12N50C-E3 by Vishay Siliconix
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB12N50C-E3 by Vishay Siliconix
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SIHB12N50C-E3-ND
|
DigiKey | MOSFET N-CH 500V 12A D2PAK Min Qty: 1000 Lead time: 14 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
|
$2.4625 / $2.6152 | Buy Now | |
DISTI #
70616559
|
RS | SIHB12N50C-E3 N-channel MOSFET Transistor, 12 A, 500 V, 3-Pin D2PAK | Siliconix / Vishay SIHB12N50C-E3 RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
|
$3.1100 / $3.6600 | RFQ | |
Bristol Electronics | 550 |
|
RFQ | ||||
Quest Components | 440 |
|
$3.2208 / $5.8560 | Buy Now |
CAD Models for SIHB12N50C-E3 by Vishay Siliconix
Part Data Attributes for SIHB12N50C-E3 by Vishay Siliconix
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
End Of Life
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
Part Package Code
|
D2PAK
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count
|
4
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
180 mJ
|
Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
12 A
|
Drain-source On Resistance-Max
|
0.555 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
208 W
|
Pulsed Drain Current-Max (IDM)
|
28 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|