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Transistors / Power Field-Effect Transistors / SIHB12N60E-GE3
Datasheets
SIHB12N60E-GE3 by:

Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for SIHB12N60E-GE3 by Vishay Intertechnologies

Overview of SIHB12N60E-GE3 by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SIHB12N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 19X1930
Newark Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SIHB12N60E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1100
  • 1 $2.2400
  • 10 $1.8800
  • 25 $1.7700
  • 50 $1.6400
  • 100 $1.5300
  • 500 $1.2800
$1.2800 / $2.2400 Buy Now
DISTI # 68W7031
Newark Mosfet, N Channel, 600V, 12A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SIHB12N60E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $1.3200
$1.3200 Buy Now
DISTI # 68W7032
Newark Mosfet, N Ch, 600V, 12A, To-263-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SIHB12N60E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,000 $1.0900
  • 2,000 $1.0300
  • 4,000 $0.9250
  • 6,000 $0.8920
  • 10,000 $0.8580
$0.8580 / $1.0900 Buy Now
DISTI # SIHB12N60E-GE3
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.2150
$1.2150 Buy Now
DISTI # 78-SIHB12N60E-GE3
Mouser Electronics MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant 2688
  • 1 $2.0000
  • 10 $1.6600
  • 100 $1.3200
  • 250 $1.2200
  • 500 $1.0800
  • 1,000 $0.8980
  • 2,000 $0.8950
  • 5,000 $0.8660
$0.8660 / $2.0000 Buy Now
Future Electronics MOSFET 600V 380MOHM@10V 12A N-CH E-SRS RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 500 Container: Tube 0
Tube
  • 500 $0.9300
  • 1,000 $0.9050
  • 1,500 $0.8950
  • 2,500 $0.8800
  • 5,000 $0.8500
$0.8500 / $0.9300 Buy Now
Future Electronics MOSFET 600V 380MOHM@10V 12A N-CH E-SRS RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 500 Container: Tube 0
Tube
  • 500 $0.9300
  • 1,000 $0.9050
  • 1,500 $0.8950
  • 2,500 $0.8800
  • 5,000 $0.8500
$0.8500 / $0.9300 Buy Now
Bristol Electronics   500
RFQ
Quest Components   400
  • 1 $2.6800
  • 103 $1.3400
  • 225 $1.2395
$1.2395 / $2.6800 Buy Now
DISTI # SIHB12N60E-GE3
TTI MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $0.8900
  • 2,000 $0.8700
  • 3,000 $0.8500
  • 5,000 $0.8400
$0.8400 / $0.8900 Buy Now
DISTI # SIHB12N60E-GE3
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.2150
$1.2150 Buy Now
DISTI # SIHB12N60E-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 7.8A, 147W, D2PAK,TO263 Min Qty: 1 0
  • 1 $1.7200
  • 3 $1.5500
  • 10 $1.3700
  • 50 $1.2400
  • 250 $1.1400
$1.1400 / $1.7200 RFQ
Chip1Cloud MOSFET N-CH 600V 12A TO263 7000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 2
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
DISTI # SIHB12N60E-GE3
EBV Elektronik Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK (Alt: SIHB12N60E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2364071
element14 Asia-Pacific MOSFET, N-CH, 600V, 12A, TO-263 RoHS: Compliant Min Qty: 1 Container: Each 1100
  • 1 $2.1094
  • 10 $1.7480
  • 100 $1.2833
  • 500 $1.1358
  • 1,000 $0.9441
  • 5,000 $0.9146
$0.9146 / $2.1094 Buy Now
DISTI # 2364071
Farnell MOSFET, N-CH, 600V, 12A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each 1100
  • 1 $2.2602
  • 10 $1.6733
  • 100 $1.2138
  • 500 $1.0739
  • 1,000 $0.9877
  • 5,000 $0.9678
$0.9678 / $2.2602 Buy Now

Part Details for SIHB12N60E-GE3

SIHB12N60E-GE3 CAD Models

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SIHB12N60E-GE3 Part Data Attributes:

Parametric Data
SIHB12N60E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHB12N60E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 117 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 147 W
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHB12N60E-GE3

This table gives cross-reference parts and alternative options found for SIHB12N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB12N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB11N60C3ATMA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHB12N60E-GE3 vs SPB11N60C3ATMA1
IPI60R380C6XKSA1 Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG SIHB12N60E-GE3 vs IPI60R380C6XKSA1
SPB11N60S5-E6327 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHB12N60E-GE3 vs SPB11N60S5-E6327
SPB11N60S5ATMA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHB12N60E-GE3 vs SPB11N60S5ATMA1
STB12NM60N-1 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics SIHB12N60E-GE3 vs STB12NM60N-1
STB12NM60N 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics SIHB12N60E-GE3 vs STB12NM60N
Q67040-S4395 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG SIHB12N60E-GE3 vs Q67040-S4395
SPI11N60C3HKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHB12N60E-GE3 vs SPI11N60C3HKSA1
SPI11N60C3XK Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHB12N60E-GE3 vs SPI11N60C3XK
Q67040-S4396 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG SIHB12N60E-GE3 vs Q67040-S4396

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