There are no models available for this part yet.
Overview of SIHB16N50C-E3 by Vishay Siliconix
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SIHB16N50C-E3 by Vishay Siliconix
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
742-SIHB16N50C-E3-ND
|
DigiKey | MOSFET N-CH 500V 16A D2PAK Min Qty: 1000 Lead time: 14 Weeks Container: Tube | Limited Supply - Call |
|
$3.2102 | Buy Now | |
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 500V, 0.38OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 640 |
|
$3.3000 / $6.6000 | Buy Now | ||
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 500V, 0.38OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 6 |
|
$3.3000 / $6.6000 | Buy Now |
CAD Models for SIHB16N50C-E3 by Vishay Siliconix
Part Data Attributes for SIHB16N50C-E3 by Vishay Siliconix
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
End Of Life
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
Part Package Code
|
D2PAK
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count
|
4
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Avalanche Energy Rating (Eas)
|
320 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
16 A
|
Drain-source On Resistance-Max
|
0.38 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
24 pF
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
250 W
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SIHB16N50C-E3
This table gives cross-reference parts and alternative options found for SIHB16N50C-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB16N50C-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIHB16N50C-E3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHB16N50C-E3 vs SIHB16N50C-E3 |
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