Part Details for SIHB186N60EF-GE3 by Vishay Intertechnologies
Overview of SIHB186N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHB186N60EF-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77AH4897
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Newark | Mosfet, N-Ch, 600V, 8.4A, To-263 Rohs Compliant: Yes |Vishay SIHB186N60EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1551 |
|
$2.0700 / $3.2400 | Buy Now |
DISTI #
SIHB186N60EF-GE3
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Avnet Americas | Transistor MOSFET N-CH 600V 8.4A 3-Pin TO-263 (Alt: SIHB186N60EF-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | 0 |
|
$1.9296 | Buy Now |
DISTI #
78-SIHB186N60EF-GE3
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Mouser Electronics | MOSFET 600V N-CH MOSFET RoHS: Compliant | 433 |
|
$1.3300 / $2.8400 | Buy Now |
|
Future Electronics | EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263? RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$1.3500 / $1.6200 | Buy Now |
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Future Electronics | EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263? RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Container: Bag | 0Bag |
|
$1.3500 / $1.5400 | Buy Now |
DISTI #
SIHB186N60EF-GE3
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TTI | MOSFET 600V N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2 Package Multiple: 1 Container: Tube |
Americas - 2000 In Stock |
|
$1.3700 / $2.8100 | Buy Now |
DISTI #
SIHB186N60EF-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 8.4A 3-Pin TO-263 (Alt: SIHB186N60EF-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | 0 |
|
$1.9296 | Buy Now |
Part Details for SIHB186N60EF-GE3
SIHB186N60EF-GE3 CAD Models
SIHB186N60EF-GE3 Part Data Attributes:
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SIHB186N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB186N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Date Of Intro | 2020-05-13 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 8.4 A | |
Drain-source On Resistance-Max | 0.193 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 43 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 82 ns | |
Turn-on Time-Max (ton) | 74 ns |