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Transistors / Power Field-Effect Transistors / SIHB22N65E-GE3
Datasheets
SIHB22N65E-GE3 by:

Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2

Part Details for SIHB22N65E-GE3 by Vishay Intertechnologies

Overview of SIHB22N65E-GE3 by Vishay Intertechnologies

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Price & Stock for SIHB22N65E-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHB22N65E-GE3
Avnet Americas N-CHANNEL 650V - Tape and Reel (Alt: SIHB22N65E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.1236
$2.1236 Buy Now
DISTI # 78-SIHB22N65E-GE3
Mouser Electronics MOSFETs 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant 0
  • 1,000 $2.3900
$2.3900 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks 0
  • 1,000 $2.2800
$2.2800 Buy Now
DISTI # SIHB22N65E-GE3
TME Transistor: N-MOSFET, unipolar, 650V, 14A, Idm: 56A, 227W Min Qty: 1 0
  • 1 $4.6800
  • 5 $4.2100
  • 25 $3.7100
  • 100 $3.3400
  • 500 $3.1200
$3.1200 / $4.6800 RFQ
DISTI # SIHB22N65E-GE3
EBV Elektronik Trans MOSFET N-CH 650V 22A 3-Pin D2PAK T/R (Alt: SIHB22N65E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHB22N65E-GE3

SIHB22N65E-GE3 CAD Models

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SIHB22N65E-GE3 Part Data Attributes

Parametric Data
SIHB22N65E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHB22N65E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 691 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 227 W
Pulsed Drain Current-Max (IDM) 56 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 186 ns
Turn-on Time-Max (ton) 111 ns

Alternate Parts for SIHB22N65E-GE3

This table gives cross-reference parts and alternative options found for SIHB22N65E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB22N65E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STW28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package STMicroelectronics SIHB22N65E-GE3 vs STW28N65M2
SIHP22N60E-E3 TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SIHB22N65E-GE3 vs SIHP22N60E-E3
SIHB180N60E-GE3 Power Field-Effect Transistor, Vishay Intertechnologies SIHB22N65E-GE3 vs SIHB180N60E-GE3
IPP60R190C6XKSA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHB22N65E-GE3 vs IPP60R190C6XKSA1
Q67040-S4550 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SIHB22N65E-GE3 vs Q67040-S4550
STI23NM60ND 19.5A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN STMicroelectronics SIHB22N65E-GE3 vs STI23NM60ND
SPW24N60CFDFKSA1 Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Infineon Technologies AG SIHB22N65E-GE3 vs SPW24N60CFDFKSA1
SPP20N60C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHB22N65E-GE3 vs SPP20N60C3XKSA1
APT20N60BCF Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation SIHB22N65E-GE3 vs APT20N60BCF
SIHP22N60E-E3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHB22N65E-GE3 vs SIHP22N60E-E3

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