Part Details for SIHB28N60EF-T1-GE3 by Vishay Intertechnologies
Overview of SIHB28N60EF-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Electronic Manufacturing
Automotive
Price & Stock for SIHB28N60EF-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
87AJ3354
|
Newark | N-Channel 600V |Vishay SIHB28N60EF-T1-GE3 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.9700 / $3.6200 | Buy Now |
|
DISTI #
SIHB28N60EF-T1-GE3
|
Avnet Americas | Transistor Power MOSFET N-CH 600V 28A 3-Pin TO-263 - Tape and Reel (Alt: SIHB28N60EF-T1-GE3) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0105 / $3.8245 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 | 0 |
|
$2.9800 | Buy Now |
|
DISTI #
SIHB28N60EF-T1-GE3
|
TTI | MOSFET N-CHANNEL 600V RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel |
Americas - 1600 In Stock |
|
$3.4800 / $3.6200 | Buy Now |
|
DISTI #
SIHB28N60EF-T1-GE3
|
Avnet Americas | Transistor Power MOSFET N-CH 600V 28A 3-Pin TO-263 - Tape and Reel (Alt: SIHB28N60EF-T1-GE3) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0105 / $3.8245 | Buy Now |
|
DISTI #
SIHB28N60EF-T1-GE3
|
Avnet Americas | Transistor Power MOSFET N-CH 600V 28A 3-Pin TO-263 - Tape and Reel (Alt: SIHB28N60EF-T1-GE3) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0105 / $3.8245 | Buy Now |
Part Details for SIHB28N60EF-T1-GE3
SIHB28N60EF-T1-GE3 CAD Models
SIHB28N60EF-T1-GE3 Part Data Attributes
|
|
SIHB28N60EF-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHB28N60EF-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 13 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 201 ns | |
| Turn-on Time-Max (ton) | 128 ns |
Alternate Parts for SIHB28N60EF-T1-GE3
This table gives cross-reference parts and alternative options found for SIHB28N60EF-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB28N60EF-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHB28N60EF-T5-GE3 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHB28N60EF-T1-GE3 vs SIHB28N60EF-T5-GE3 |