Part Details for SIHD5N50D-E3 by Vishay Intertechnologies
Overview of SIHD5N50D-E3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHD5N50D-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08X3790
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Newark | Mosfet, N Channel, 500V, 5.3A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHD5N50D-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7020 | Buy Now |
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DISTI #
99W9456
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Newark | Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SIHD5N50D-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4770 / $0.5630 | Buy Now |
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DISTI #
SIHD5N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK - Tape and Reel (Alt: SIHD5N50D-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4836 / $0.6143 | Buy Now |
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DISTI #
78-SIHD5N50D-E3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 260 |
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$0.4480 / $1.2200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.4780 | Buy Now |
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DISTI #
SIHD5N50D-E3
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TTI | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4480 / $0.4660 | Buy Now |
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DISTI #
SIHD5N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK - Tape and Reel (Alt: SIHD5N50D-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4836 / $0.6143 | Buy Now |
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DISTI #
SIHD5N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK - Tape and Reel (Alt: SIHD5N50D-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4836 / $0.6143 | Buy Now |
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DISTI #
SIHD5N50D-E3
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EBV Elektronik | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK (Alt: SIHD5N50D-E3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 1 Weeks, 2 Days | EBV - 0 |
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Buy Now |
Part Details for SIHD5N50D-E3
SIHD5N50D-E3 CAD Models
SIHD5N50D-E3 Part Data Attributes
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SIHD5N50D-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD5N50D-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 23 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD5N50D-E3
This table gives cross-reference parts and alternative options found for SIHD5N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD5N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FS5VS-9-T2 | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | SIHD5N50D-E3 vs FS5VS-9-T2 |
| NTE2398 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | SIHD5N50D-E3 vs NTE2398 |
| SIHD5N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD5N50D-E3 vs SIHD5N50D-GE3 |
| SIHD5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD5N50D-E3 vs SIHD5N50D-GE3 |
| IXTA5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-E3 vs IXTA5N50P |
| SIHU5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SIHD5N50D-E3 vs SIHU5N50D-GE3 |
| 2SK2434TL | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | SIHD5N50D-E3 vs 2SK2434TL |
| SIHU5N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD5N50D-E3 vs SIHU5N50D-GE3 |
| IXTP5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-E3 vs IXTP5N50P |
| 2N7290 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | SIHD5N50D-E3 vs 2N7290 |