Part Details for SIHD5N50D-GE3 by Vishay Intertechnologies
Overview of SIHD5N50D-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHD5N50D-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
63W4107
|
Newark | Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHD5N50D-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.7400 / $1.1200 | Buy Now |
|
DISTI #
99W9457
|
Newark | Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SIHD5N50D-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4030 / $0.4760 | Buy Now |
|
DISTI #
SIHD5N50D-GE3
|
Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK - Tape and Reel (Alt: SIHD5N50D-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.4091 / $0.5196 | Buy Now |
|
DISTI #
78-SIHD5N50D-GE3
|
Mouser Electronics | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 0 |
|
$0.4330 / $1.0100 | Order Now |
|
|
Future Electronics | D Series 500 V 5.3 A 1.5 Ohm Single N-Channel Power MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
|
$0.3750 / $0.4400 | Buy Now |
|
|
Bristol Electronics | 3000 |
|
RFQ | ||
|
|
Quest Components | 2400 |
|
$0.5313 / $1.5180 | Buy Now | |
|
DISTI #
SIHD5N50D-GE3
|
TTI | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$0.3800 / $0.3900 | Buy Now |
|
DISTI #
SIHD5N50D-GE3
|
Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin DPAK - Tape and Reel (Alt: SIHD5N50D-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.4091 / $0.5196 | Buy Now |
|
DISTI #
SIHD5N50D-GE3
|
TME | Transistor: N-MOSFET, unipolar, 500V, 3.4A, Idm: 10A, 104W Min Qty: 1 | 0 |
|
$0.5250 / $0.7870 | RFQ |
Part Details for SIHD5N50D-GE3
SIHD5N50D-GE3 CAD Models
SIHD5N50D-GE3 Part Data Attributes
|
|
SIHD5N50D-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHD5N50D-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 23 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD5N50D-GE3
This table gives cross-reference parts and alternative options found for SIHD5N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD5N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FS5VS-9-T2 | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | SIHD5N50D-GE3 vs FS5VS-9-T2 |
| NTE2398 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | SIHD5N50D-GE3 vs NTE2398 |
| SIHD5N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD5N50D-GE3 vs SIHD5N50D-GE3 |
| IXTA5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-GE3 vs IXTA5N50P |
| SIHU5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SIHD5N50D-GE3 vs SIHU5N50D-GE3 |
| 2SK2434TL | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | SIHD5N50D-GE3 vs 2SK2434TL |
| SIHU5N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD5N50D-GE3 vs SIHU5N50D-GE3 |
| IXTP5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-GE3 vs IXTP5N50P |
| SIHD5N50D-E3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD5N50D-GE3 vs SIHD5N50D-E3 |
| 2N7290 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | SIHD5N50D-GE3 vs 2N7290 |