Part Details for SIHD5N50D-GE3 by Vishay Siliconix
Overview of SIHD5N50D-GE3 by Vishay Siliconix
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHD5N50D-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHD5N50D-GE3-ND
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DigiKey | MOSFET N-CH 500V 5.3A TO252AA Min Qty: 1 Lead time: 10 Weeks Container: Tube | Temporarily Out of Stock |
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$0.3795 / $1.0100 | Buy Now |
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Velocity Electronics | Our Stock | 53 |
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RFQ |
Part Details for SIHD5N50D-GE3
SIHD5N50D-GE3 CAD Models
SIHD5N50D-GE3 Part Data Attributes
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SIHD5N50D-GE3
Vishay Siliconix
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Datasheet
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SIHD5N50D-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 23 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHD5N50D-GE3
This table gives cross-reference parts and alternative options found for SIHD5N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD5N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FS5VS-9-T2 | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | SIHD5N50D-GE3 vs FS5VS-9-T2 |
NTE2398 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | SIHD5N50D-GE3 vs NTE2398 |
SIHD5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD5N50D-GE3 vs SIHD5N50D-GE3 |
IXTA5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-GE3 vs IXTA5N50P |
SIHU5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SIHD5N50D-GE3 vs SIHU5N50D-GE3 |
2SK2434TL | Power Field-Effect Transistor, 5A I(D), 450V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | SIHD5N50D-GE3 vs 2SK2434TL |
SIHU5N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD5N50D-GE3 vs SIHU5N50D-GE3 |
IXTP5N50P | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXYS Corporation | SIHD5N50D-GE3 vs IXTP5N50P |
SIHD5N50D-E3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD5N50D-GE3 vs SIHD5N50D-E3 |
2N7290 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | SIHD5N50D-GE3 vs 2N7290 |