Part Details for SIHD6N65E-GE3 by Vishay Intertechnologies
Overview of SIHD6N65E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHD6N65E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
51AK9381
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Newark | Mosfet, N-Ch, 650V, 7A, To-252 Rohs Compliant: Yes |Vishay SIHD6N65E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 46 |
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$1.0700 / $1.6600 | Buy Now |
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DISTI #
99W9459
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Newark | N-Channel 650V |Vishay SIHD6N65E-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6660 / $0.7960 | Buy Now |
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DISTI #
SIHD6N65E-GE3
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Avnet Americas | N-CHANNEL 650V - Tape and Reel (Alt: SIHD6N65E-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.6984 | Buy Now |
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DISTI #
78-SIHD6N65E-GE3
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Mouser Electronics | MOSFETs 650V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 3452 |
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$0.7430 / $1.0900 | Buy Now |
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Future Electronics | E Series N-Channel 650 V 78 W 0.6 Ω 48 nC Surface Mount Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0Tube |
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$0.6800 / $0.8400 | Buy Now |
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Future Electronics | E Series N-Channel 650 V 78 W 0.6 Ω 48 nC Surface Mount Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Container: Tube | 0Tube |
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$0.6800 / $0.8400 | Buy Now |
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DISTI #
SIHD6N65E-GE3
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TTI | MOSFETs 650V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 3000 In Stock |
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$0.7100 / $0.8700 | Buy Now |
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DISTI #
SIHD6N65E-GE3
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TME | Transistor: N-MOSFET, unipolar, 650V, 5A, Idm: 18A, 78W, DPAK,TO252 Min Qty: 1 | 0 |
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$0.9400 / $1.4000 | RFQ |
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DISTI #
SIHD6N65E-GE3
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EBV Elektronik | Trans MOSFET N-CH 650V 7A 3-Pin TO-252 (Alt: SIHD6N65E-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHD6N65E-GE3
SIHD6N65E-GE3 CAD Models
SIHD6N65E-GE3 Part Data Attributes
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SIHD6N65E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD6N65E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD6N65E-GE3
This table gives cross-reference parts and alternative options found for SIHD6N65E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD6N65E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK7Q60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHD6N65E-GE3 vs TK7Q60W |
| SIHD7N60E-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD6N65E-GE3 vs SIHD7N60E-GE3 |
| SPP07N60S5HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD6N65E-GE3 vs SPP07N60S5HKSA1 |
| SIHD7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD6N65E-GE3 vs SIHD7N60E-GE3 |
| SIHU7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD6N65E-GE3 vs SIHU7N60E-GE3 |
| TSM60NB600CPROG | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Taiwan Semiconductor | SIHD6N65E-GE3 vs TSM60NB600CPROG |
| CDM7-700LR | Power Field-Effect Transistor, 7A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | SIHD6N65E-GE3 vs CDM7-700LR |
| SPP07N60S5XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD6N65E-GE3 vs SPP07N60S5XKSA1 |
| SPP07N60C3XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD6N65E-GE3 vs SPP07N60C3XKSA1 |
| SPP07N60C3XK | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD6N65E-GE3 vs SPP07N60C3XK |